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| SMCJ Series Transient Voltage Suppressors PRODUCT SUMMARY Stand-off Voltage ratings from 5.0V to 440V Peak pulse power 1500W in SMC surface-mount package FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low profile package with built-in strain relief for surface-mount Glass passivated junction Low incremental surge resistance, excellent clamping capability Peak pulse power capability of 1500W with a 10/1000us waveform, repetition rate (duty cycle): 0.01% Very fast response time High temperature soldering guaranteed: 260C for 10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AB (SMC) molded plastic over passivated chip Terminals: Matte-Sn plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation. Mounting position: Any Weight: 0.007oz., 0.21g Pb-free; RoHS-compliant Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. SMCJ10CA). Electrical characteristics apply in both directions. MAXIMUM RATINGS Rating at 25C ambient temperature unless otherwise specified. Parameter Peak pulse power dissipation with a 10/1000us waveform (1,2) (see Fig. 1) Peak pulse current with a 10/1000us waveform (1) Symbol P PPM IPPM IFSM RJA RJL TJ, TSTG Value Minimum 1500 See Next Table 200 75 15 -55 to +150 Unit W A A C/W C/W C Peak forward surge current, 8.3ms single half sine-wave uni-directional only (2) Typical thermal resistance, junction to ambient Typical thermal resistance, junction to lead Operating junction and storage temperature range (3) Notes: 1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25C per Fig. 2. 2. Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads at each terminal 3. Mounted on minimum recommended pad layout 9/21/2006 Rev.4.01 www.SiliconStandard.com 1 of 4 SMCJ Series ELECTRICAL PARAMETERS At 25C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Device marking co d e Device type SMCJ5.0 SMCJ5.0A SMCJ6.0 SMCJ6.0A SMCJ6.5 SMCJ6.5A SMCJ7.0 SMCJ7.0A SMCJ7.5 SMCJ7.5A SMCJ8.0 SMCJ8.0A SMCJ8.5 SMCJ8.5A SMCJ9.0 SMCJ9.0A SMCJ10 SMCJ10A SMCJ11 SMCJ11A SMCJ12 SMCJ12A SMCJ13 SMCJ13A SMCJ14 SMCJ14A SMCJ15 SMCJ15A SMCJ16 SMCJ16A SMCJ17 SMCJ17A SMCJ18 SMCJ18A SMCJ20 SMCJ20A SMCJ22 SMCJ22A SMCJ24 SMCJ24A SMCJ26 SMCJ26A SMCJ28 SMCJ28A SMCJ30 SMCJ30A (5) Breakdow n voltage V(BR) (Volts) (1) Min. 6.40 6.40 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 Max. 7.82 7.07 8.15 7.37 8.82 7.98 9.51 8.60 10.2 9.21 10.9 9.83 11.5 10.4 12.2 11.1 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 UNI GDD GDE GDF GDG GDH GDK GDL GDM GDN GDP GDQ GDR GDS GDT GDU GDV GDW GDX GDY GDZ GED GEE GEF GEG GEH GEK GEL GEM GEN GEP GEQ GER GES GET GEU GEV GEW GEX GEY GEZ GFD GFE GFF GFG GFH GFK BI BD D BD E BD F BD G BD H BD K BD L BD M BD N BD P BD Q BD R BD S BD T BD U BD V BD W BD X BD Y BD Z BED BEE BEF BEG BEH BEK BEL BEM BEN BEP BEQ BER BES BET BEU BEV BEW BEX BEY BEZ B FD B FE B FF B FG B FH B FK Test current at IT (mA) 10 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off voltage VWM (Volts) 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 Maximum reverse leakage at VWM ID(3) (uA) 1000 1000 1000 1000 500 500 200 200 100 100 50 50 20 20 10.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum peak pulse surge current IPPM(2) (A) 156.3 163.0 131.6 145.6 122.0 133.9 112.8 125.0 104.9 116.3 100.0 110.3 94.3 104.2 88.8 97.4 79.8 88.2 74.6 82.4 68.2 75.4 63.0 69.8 58.1 64.7 55.8 61.5 52.1 57.7 49.2 54.3 46.6 51.4 41.9 46.3 38.1 42.3 34.9 38.6 32.2 35.6 30.0 33.0 28.0 31.0 Maximum clamping voltage at IPPM VC (Volts) 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 Notes: 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For the bi-directional SMCG/SMCJ5.0CA, the maximum V(BR) is 7.25V. 9/21/2006 Rev.4.01 www.SiliconStandard.com 2 of 4 SMCJ Series ELECTRICAL PARAMETERS At 25C ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) Maximum reverse leakage at VWM ID(3) (uA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum peak pulse surge current IPPM(2) (A) 25.4 28.1 23.3 25.8 21.0 23.3 19.6 21.6 18.7 20.6 17.5 19.4 16.5 18.2 15.6 17.2 14.6 16.0 14.0 15.5 13.2 14.6 12.0 13.3 11.2 12.4 10.8 11.9 9.9 10.9 9.4 10.3 8.4 9.3 7.7 8.5 7.0 7.8 6.5 7.2 5.6 6.2 5.2 5.8 4.9 5.5 5.0 4.6 4.2 3.7 3.1 2.6 2.3 2.1 Maximum clamping voltage at IPPM VC (Volts) 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93 107 96 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 268 243 287 259 304 275 292 324 356. 405 486 567 648 713 Device marking co d e Device type SMCJ33 SMCJ33A SMCJ36 SMCJ36A SMCJ40 SMCJ40A SMCJ43 SMCJ43A SMCJ45 SMCJ45A SMCJ48 SMCJ48A SMCJ51 SMCJ51A SMCJ54 SMCJ54A SMCJ58 SMCJ58A SMCJ60 SMCJ60A SMCJ64 SMCJ64A SMCJ70 SMCJ70A SMCJ75 SMCJ75A SMCJ78 SMCJ78A SMCJ85 SMCJ85A SMCJ90 SMCJ90A SMCJ100 SMCJ100A SMCJ110 SMCJ110A SMCJ120 SMCJ120A SMCJ130 SMCJ130A SMCJ150 SMCJ150A SMCJ160 SMCJ160A SMCJ170 SMCJ170A SMCJ180A SMCJ200A SMCJ220A SMCJ250A SMCJ300A SMCJ350A SMCJ400A SMCJ440A UNI GFL GFM GFN GFP GFQ GFR GFS GFT GFU GFV GFW GFX GFY GFZ GGD GGE GGF GGG GGH GGK GGL GGM GGN GGP GGQ GGR GGS GGT GGU GGV GGW GGX GGY GGZ GHD GHE GHF GHG GHH GHK GHL GHM GHN GHP GHQ GHR GHT GHV GHX GHZ GJE GJG GJK GJM BI B FL B FM B FN B FP B FQ B FR B FS B FT B FU B FV B FW B FX B FY B FZ BGD BGE BGF BGG BGH BGK BGL BGM BGN BGP BGQ BGR BGS BGT BGU BGV BGW BGX BGY BGZ BHD BHE BHF BHG BHH BHK BHL BHM BHN BHP BHQ BHR BHT BHV BHX BHZ B JE B JG B JK B JM Breakdow n voltage V(BR) (Volts) (1) Min. 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 189 209 224 246 279 335 391 447 492 Max. 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86.0 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 209 222 247 272 309 371 432 494 543 Test current at IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Stand-off voltage VWM (Volts) 33 33 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 170 180 200 220 250 300 350 400 440 Notes: 1. V(BR) measured after IT applied for 300us square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled 4. All terms and symbols are consistent with ANSI/IEEE C62.35 5. For parts without A, the VBR is +10% 9/21/2006 Rev.4.01 www.SiliconStandard.com 3 of 4 SMCJ Series RATINGS AND CHARACTERISTIC CURVES Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 9/21/2006 Rev.4.01 www.SiliconStandard.com 4 of 4 |
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